ingaas linear image sensors 1 near infrared (0.9 to 1.7 m) image sensors g9203-256d g9204-512d www.hamamatsu.com structure parameter g9203-256d g9204-512d unit cooling non-cooled - image size 12.8 0.5 mm number of total pixels 256 512 pixels number of effective pixels 256 512 pixels pixel size (h v) 50 500 25 500 m pixel pitch 50 25 m package 22-pin ceramic dip (see dimensional outlines.) - window material borosilicate glass with anti-re ective coating - low dark current room temperature operation selectable feedback capacitance (cf): 10 pf or 0.5 pf features applications near infrared spectroscopy foreign matter detection monitors dwdm monitors pixel pitch g9203-256d: 50 m g9204-512d: 25 m the g9203-256d and g9204-512d are ingaas linear image sensors that deliver high sensitivity and stability in the near infrared region. a charge ampli er array comprised of cmos transistors, a shift register and a timing generator, etc. are assembled with an ingaas photodiode array. low cost is also achieved by using inexpensive ceramic packages. feedback capacitance for the signal processing circuit formed on the cmos chip can be selected from 10 pf or 0.5 pf by external voltage.
2 ingaas linear image sensors g9203-256d, g9204-512d kmirc0080ea h x v g9203-256d g9204-512d type no. x 30 10 h 50 25 v 500 500 kmirc0081ea clk video ad_trig reset vdd vss inp vref cf_select cmos ic timing generator bias generator shift register address switch charge amp + sample-and-hold circuit ingaas photodiode array readout circuit parameter symbol condition value unit operating temperature topr chip temperature, no dew condensation * 1 -40 to +70 c storage temperature tstg chip temperature, no dew condensation * 1 -40 to +85 c soldering conditions - 260 c, heating time: within 5 seconds - supply voltage vdd, inp, vref ta=25 c -0.3 to +6 v clock pulse voltage v ? ta=25 c -0.3 to +6 v reset pulse voltage v(res) ta=25 c -0.3 to +6 v gain selection terminal voltage vcsel ta=25 c -0.3 to +6 v *1: when there is a temperature difference betw een a product and the surrounding area in hi gh humidity environment, dew condensatio n may occur on the product surface. dew condensation on the prod uct may cause deterioration in characteristics and reliability. note: exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. always be sure to use the product within the absolute maximum ratings. details of photosensitive area (unit: m) block diagram absolute maximum ratings parameter symbol min. typ. max. unit supply voltage vdd 4.9 5.0 5.1 v vref - 1.26 - v element bias inp 3.5 4.5 4.6 v ground vss - 0 - v clock pulse voltage high v? vdd - 0.5 vdd vdd + 0.5 v low - 0 0.4 reset pulse voltage high v(res) vdd - 0.5 vdd vdd + 0.5 v low 0 0 0.4 recommended terminal voltage
3 ingaas linear image sensors g9203-256d, g9204-512d dark output characteristics (ta=25 c, ce=16 nv/e - ) parameter symbol g9203-256d g9204-512d unit min. typ. max. min. typ. max. dark output (dark output nonuniformity) v d -2 0.4 2 -0.5 0.1 0.5 v/s dark current i d -20 4 20 -5 1 5 pa parameter symbol g9203-256d g9204-512d unit min. typ. max. min. typ. max. current consumption i(vdd) - 45 50 - 90 100 ma i(vref) --1--1m a i(inp) --1--1m a clock frequency f 0.1 - 4 0.1 - 4 mhz video data rate fv 0.0125 f/8 0.5 0.0125 f/8 0.5 mhz output voltage high v h - 4.5 inp - 4.5 inp v low v l vref 1.26 - vref 1.26 - v output offset voltage vos - vref - - vref - v output impedance zo -2--2- k electrical and optical characteristics (ta=25 c, vdd=5 v, inp=4.5 v, vref=1.26 v, vf=5 v, ce=16 nv/e - , f=250 khz) parameter symbol condition min. typ. max. unit spectral response range - 0.9 to 1.7 - m peak sensitivity wavelength p - 1.55 - m photosensitivity s = p 0.85 0.95 - a/w conversion ef ciency ce - 16 - nv/e - photoresponse nonuniformity * 2 prnu integration time: 10 ms - 2 5% saturation output voltage vsat - 3 -v saturation charge qsat - 187.5 -m e - readout noise n integration time: 10 ms - 180 300 v rms dynamic range d - 16666 -- defective pixels * 3 - - - 0% * 2: 50% of saturation, after dark output subtraction, excluding rst and last pixels *3: pixels with photoresponse nonuniformity, readout noise or dark current higher than the maximum value electrical characteristics (ta=25 c)
4 ingaas linear image sensors g9203-256d, g9204-512d cds inp photodiode shift register offset compensation circuit video ad_trig high gain low gain timing generator clk external input reset vref vss cf_select vdd 1 pixel kmirc0027ea equivalent circuit vss inp cf_select vdd reset ingaas linear image sensor clk video ad_trig vref buffer amp buffer amp kmirc0012ea connection example
5 ingaas linear image sensors g9203-256d, g9204-512d t1 tr(res) clk reset ad_trig video tf(res) readout time for channel 1 readout time for last channel tr(clk) tf(clk) readout time for channel 2 actual integration time t3 blank period (10 clocks or more) t2 integration time reset output integration time n ch (n-1) ch 2 ch 1 ch 8 n clocks (readout time) ad_trig video (output) clk (input) reset (input) 8 clocks 10 clocks min. 2 clocks 8 clocks kmirc0066eb timing chart parameter symbol min. typ. max. unit clock pulse frequency - 0.1 - 4 mhz clock pulse width tpw(clk) 100 - - ns clock pulse rise/fall times tr(clk), tf(clk) 0 20 100 ns reset pulse width tpw(res) 6000 - - ns reset pulse rise/fall times tr(res), tf(res) 0 20 100 ns reset (rise) timing t1 50 - - ns reset (fall) timing t2 50 - - ns output settling time t3 - - 600 ns
6 ingaas linear image sensors g9203-256d, g9204-512d kmirb0017ea 0.4 -20 10 50 -10 30 20 60 04 07 0 temperature (c) noise (mv rms) 0 0.3 0.5 0.2 0.1 (typ. date rate: 250 khz, cf=10 pf, integration time: 10 ms, number of integrations: 50) kmirb0083ea 0.8 1.0 1.8 1.6 1.4 1.2 2.0 70 80 75 85 95 90 100 wavelength (m) transmittance (%) (ta=25 c ) kmirb0019eb spectral response 0.5 1.0 1.5 2.0 0 0.4 0.2 1.0 0.8 0.6 wavelength (m) photosensitivity (a/w) (typ. ta=25 c ) spectral transmittance characteristics of window material (typical example) kmirb0020ea photosensitivity temperature characteristics noise vs. temperature 1.52 1.54 1.56 1.60 1.58 1.62 1.64 0 60 120 40 100 20 80 wavelength (m) relative sensitivity (%) (typ.) 70 c 30 c -10 c
7 ingaas linear image sensors g9203-256d, g9204-512d kmirb0021ea kmirb0081ea 10 pa -20 10 50 -10 30 20 60 04 07 0 temperature (c) dark current 10 fa 1 pa 100 pa 100 fa (typ.) g9204-512d g9203-256d -40 -30 1 10 100 1000 10000 (ta=25 ?c, vdd=5 v, inp=4.5 v, vref=1.26 v, ce=16 nv/e, f=250 khz) -20 -10 0 10 20 30 linearity error (%) output voltage (mv) conversion ef ciency cf-select 16 nv/e - ( cf=10 pf) high 320 nv/e - ( cf=0.5 pf) low low: 0 v (gnd), high: 5 v (vdd) terminal name input/output function clk input (cmos logic) clock pulse for operating the cmos shift register reset input (cmos logic) reset pulse for initializing the feedback capacitance in the charge ampli er formed in the cmos chip. the width of the reset pulse determines integration time. vdd input supply voltage for operating the signal processing circuit in the cmos chip vss - ground for the signal processing circuit in the cmos chip inp input reset voltage for the charge ampli er array in the cmos chip cf_select input voltage that determines the conversion ef ciency in the cmos chip. low gain (ce=16 nv/e - ) at 0 v, and high gain (ce=320 nv/e - ) at 5 v. vref input reset voltage for the offset compensation circuit in the cmos chip ad_trig output digital signal for a/d conversion; positive polarity video output analog video signal; positive polarity linearity error (g9204-512s) dark current vs. temperature pin connections
8 ingaas linear image sensors g9203-256d, g9204-512d index mark _even for even no. pixels _odd for odd no. pixels cmos amp 1 22 2 21 10 13 11 12 31.8 0.3 1.3 0.2 3.00 0.3 15.1 0.3 15.2 0.3 2.54 0.1 pin no. 12 13 14 15 16 17 18 19 20 21 22 video_odd vref clk_odd nc inp vss vdd nc ad_trig_odd reset_odd cf_select photosensitive area 4.0 1.0 0.51 0.2 pin no. 1 2 3 4 5 6 7 8 9 10 11 pin connection pin connection nc reset_even ad_trig_even nc nc nc nc nc clk_even nc video_even lead treatment: ni/au plating lead material: feni alloy refractive index of window material: 1.47 window material thickness: 0.75 0.05 ar coat: coated (1.55 m peak) window sealing method: resin bonding center accuracy of photosensitive area: -0.3x+0.3 -0.3y+0.3 rotation accuracy of photosensitive area: -5 ?+5 kmira0013ec g9204-512d index mark cmos amp 1 22 2 21 10 13 11 photosensitive area 12 31.8 0.3 1.30 0.2 3.0 0.3 10.1 0.3 2.1 0.5 4.0 1.0 10.2 0.3 2.54 0.1 0.51 0.2 pin no. 1 2 3 4 5 6 7 8 9 10 11 pin connection pin connection nc nc nc nc nc nc nc nc nc nc nc pin no. 12 13 14 15 16 17 18 19 20 21 22 video vref clk nc inp vss vdd nc ad_trig reset cf_select lead treatment: ni/au plating lead material: feni alloy refractive index of window material: 1.47 window material thickness: 0.75 0.05 ar coat: coated (1.55 m peak) window sealing method: resin bonding center accuracy of photosensitive area: -0.3x+0.3 -0.5y+0.5 rotation accuracy of photosensitive area: -5 ?+5 kmira0014eb g9203-256d dimensional outlines (unit: mm)
cat. no. kmir1013e06 jul. 2015 dn 9 www.hamamatsu.com hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184 u.s.a.: hamamatsu corporation: 360 foothill road, bridgewater, n.j. 08807, u.s.a., telephone: (1) 908-231-0960, fax: (1) 908-23 1-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 8152-375-0, fax: (49) 8152-265-8 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, telephone: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, united kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: torshamnsgatan 35 16440 kista, sweden, telephone: (46) 8-509-031-00, fax: (46) 8-5 09-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1 int. 6, 20020 arese (milano), italy, telephone: (39) 02-93581733 , fax: (39) 02-93581741 china: hamamatsu photonics (china) co., ltd.: b1201, jiaming center, no.27 dongsanhuan beilu, chaoyang district, beijing 100020 , china, telephone: (86) 10-6586-6006, fax: (86) 10-6586-2866 product specifications are subject to change without prior notice due to improvements or other reasons. this document has been carefully prepared and the information contained is believed to be accurate. in rare cases, however, there may be inaccuracies such as text errors. before using these products, always contact us for the delivery specification sheet to check the latest specifications. the product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. however, even if within the warranty period we accept absolutely no liability for any loss caused by natural d isasters or improper product use. copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. information described in this material is current as of july, 2015. ingaas linear image sensors g9203-256d, g9204-512d electrostatic countermeasures this device has a built-in protection circuit against static electrical char ges. however, to prevent destroying the device with electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static discharges. also protect th is de- vice from surge voltages which might be caused by peripheral equipment. related information ? disclaimer ? image sensors precautions www.hamamatsu.com/sp/ssd/doc_en.html
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